Structure comprising tunable anti-reflective coating and method of forming thereof
US7199046B2 · kind B2 · utility
7Cited by
9References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2003 |
| Grant date | Apr 3, 2007 |
| Priority date | — |
| Expiry date | Nov 14, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1031
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure in back end of line (BEOL) applications comprising a tunable etch resistant anti-reflective (TERA) coating is described. The TERA coating can, for example, be incorporated within a single damascene structure, or a dual damascene structure. The TERA coating can serve as part of a lithographic mask for forming the interconnect structure, or it may serve as a hard mask, a chemical mechanical polishing (CMP) stop layer, or a sacrificial layer during CMP.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.