Polymer memory device with variable period of retention time
US7199394B2 · kind B2 · utility
11Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2004 |
| Grant date | Apr 3, 2007 |
| Priority date | — |
| Expiry date | Nov 11, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/701
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems and methodologies are provided for of enabling a polymer memory cell to exhibit variable retention times for stored data therein. Such setting of retention time can depend upon a programming mode and/or type of material employed in the polymer memory cell. Short retention times can be obtained by programming the polymer memory cell via a low current or a low electrical field. Similarly, long retention times can be obtained by employing a high current or electrical field to program the polymer memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.