Semiconductor device structures including protective layers formed from healable materials
US7199464B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2005 |
| Grant date | Apr 3, 2007 |
| Priority date | — |
| Expiry date | Feb 8, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/10157
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor device structures include protective layers that are formed from healable or healed materials. The healable materials are configured to eliminate cracks and delamination, including singulation-induced cracks and delamination. The protective layers may be formed by applying a layer of protective material to surfaces of semiconductor device components that are carried by a fabrication substrate. The layer of protective material is then severed and the fabrication substrate is at least partially severed. Cracks and delaminated regions that are formed during severing are then healed. If a curable polymer is employed as the protective material, it may be partially cured before severing is effected, then self-healed before being fully cured. Alternatively, a thermoplastic material may be used as the protective material, with healing being effected by heating at least regions of the thermoplastic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.