MRAM with vertical storage element and field sensor
US7200032B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 20, 2004 |
| Grant date | Apr 3, 2007 |
| Priority date | — |
| Expiry date | Jan 6, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory element comprising a magnetic storage element having at least one magnetic layer made of a magnetic material and being vertically oriented relative to a wafer surface on which the magnetic memory element is formed, the magnetic layer having a magnetic anisotropy with its magnetization vector being magnetically coupled to at least one current line, and a magnetic sensor element for sensing the magnetization of the at least one magnetic layer of the magnetic storage element comprising at least one magnetic layer having a magnetization vector being magnetically coupled to the magnetization vector of the at least one magnetic layer of the magnetic storage element, the magnetic sensor element being conductively coupled to the at least one current line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.