MRAM with coil for creating offset field
US7200033B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 30, 2004 |
| Grant date | Apr 3, 2007 |
| Priority date | — |
| Expiry date | Mar 20, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An MRAM memory chip includes a plurality of magnetoresistive memory cells each including a magnetic tunnel junction having first (fixed) and second (free) magnetic regions, where the second magnetic region includes at least two ferromagnetic layers that are antiferromagnetically coupled, wherein a coil surrounds the memory chip for creating a magnetic offset field. Further, a method of writing to an MRAM chip includes bringing the memory cells into an active state exhibiting a reduced switching field before writing thereto and bringing the memory cells into a passive state exhibiting enlarged switching field after writing thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.