Protecting silicon germanium sidewall with silicon for strained silicon/silicon germanium MOSFETs

US7202132B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Huilong Zhu · Poughkeepsie, US
• Bruce B. Doris · Brewster, US
• Dan M. Mocuta · Herent, BE

Key dates

• Filing date: Jan 16, 2004
• Grant date: Apr 10, 2007
• Expiry date: Jun 25, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/791

Abstract

Raised Si/SiGe source and drain regions include epitaxially grown silicon on SiGe sidewalls. The epi silicon prevents adverse effects of Ge during silicidation, including Ge out diffusion and silicide line breakage. The Si also increases the active area.