Method for forming a contact opening in a semiconductor device
US7202171B2 · kind B2 · utility
6Cited by
16References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 3, 2001 |
| Grant date | Apr 10, 2007 |
| Priority date | — |
| Expiry date | Jan 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a self-aligned contact opening in an insulative layer formed over a substrate in a semiconductor device involves etching the insulative layer with at least one fluorocarbon and ammonia.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.