Silicon-oxide-nitride-oxide-silicon (SONOS) memory device and methods of manufacturing and operating the same
US7202521B2 · kind B2 · utility
11Cited by
14References
31Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2004 |
| Grant date | Apr 10, 2007 |
| Priority date | — |
| Expiry date | Oct 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a silicon-oxide-nitride-oxide-silicon (SONOS) memory device, and methods of manufacturing and operating the same, the SONOS memory device includes a semiconductor layer including source and drain regions and a channel region, an upper stack structure formed on the semiconductor layer, the upper stack structure and the semiconductor layer forming an upper SONOS memory device, and a lower stack structure formed under the semiconductor layer, the lower stack structure and the semiconductor layer forming a lower SONOS memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.