Method for forming isolation layer in semiconductor device
US7205242B2 · kind B2 · utility
2Cited by
6References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 29, 2004 |
| Grant date | Apr 17, 2007 |
| Priority date | — |
| Expiry date | Dec 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for forming an insulating layer in a semiconductor device. After a first oxide film is formed in a trench, an impurity remaining on the first oxide film in the process of etching the first oxide film using a gas containing fluorine is stripped using oxygen plasma or hydrogen plasma. Thus, it can prevent degradation of device properties due to diffusion of the impurity without additional equipment. Therefore, it can help improve reliability of a next-generation device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.