Forming low k dielectric layers
US7205246B2 · kind B2 · utility
502Cited by
7References
43Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2002 |
| Grant date | Apr 17, 2007 |
| Priority date | — |
| Expiry date | Mar 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low k dielectric layer is formed by depositing an unset dielectric layer on a substrate, the dielectric layer including Silicon, Carbon and Oxygen. The surface of the dielectric layer exposed to an activated gas to form a semi-permeable skin on or of the surface of the layer. The layer is then cured to render at least part of the layer porous.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.