Image sensor cells

US7205627B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• James W. Adkisson · Jericho, US
• John J. Ellis-Monaghan · Grand Isle, US
• Jeffrey P. Gambino · Gresham, US
• Mark D. Jaffe · Shelburne, US
• Richard J. Rassel · Tappahannock, US

Key dates

• Filing date: Feb 23, 2005
• Grant date: Apr 17, 2007
• Expiry date: Feb 23, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/147

Abstract

A structure (and method for forming the same) for an image sensor cell. The structure includes (a) a semiconductor substrate; (b) a charge collection well on the substrate, the charge collection well comprising a semiconductor material doped with a first doping polarity; (c) a surface pinning layer on and in direct physical contact with the charge collection well, the surface pinning layer comprising a semiconductor material doped with a second doping polarity opposite to the first doping polarity; and (d) an electrically conducting push electrode being in direct physical contact with the surface pinning layer but not being in direct physical contact with the charge collection well.