Antifuse having tantalum oxynitride film and method for making same
US7206215B2 · kind B2 · utility
7Cited by
20References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2002 |
| Grant date | Apr 17, 2007 |
| Priority date | — |
| Expiry date | Apr 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/712
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A capacitor has a tantalum oxynitride film. One method for making the film comprises forming a bottom plate electrode and then forming a tantalum oxide film on the bottom plate electrode. Nitrogen is introduced to form a tantalum oxynitride film. A top plate electrode is formed on the tantalum oxynitride film. Embodiments include a method of operating an antifuse, comprising applying a voltage across electrodes of a capacitor having a tantalum oxynitride film and forming a hole in the tantalum oxynitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.