Metal-halogen physical vapor deposition for semiconductor device defect reduction
US7208398B2 · kind B2 · utility
4Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2004 |
| Grant date | Apr 24, 2007 |
| Priority date | — |
| Expiry date | Jul 19, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of manufacturing a metal silicide electrode (100) for a semiconductor device (110). The method comprises depositing by physical vapor deposition, halogen atoms (120) and transition metal atoms (130) to form a halogen-containing metal layer (140) on a semiconductor substrate (150). The halogen-containing metal layer and the semiconductor substrate are reacted to form a metal silicide electrode. Other aspects of the present invention include a method of manufacturing an integrated circuit (400) comprising the metal silicide electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.