Semiconductor device
US7208797B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2001 |
| Grant date | Apr 24, 2007 |
| Priority date | — |
| Expiry date | Dec 21, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/926
Abstract
There is provided a semiconductor device including a substrate, a device isolation insulating film formed on the substrate, a gate electrode formed on the substrate, a gate wiring layer formed in the device isolation insulating film and connected to the gate electrode, source and drain electrodes arranged on the substrate to face each other via the gate electrode, and an insulating film covering bottom and side surfaces of each of the gate electrode and the gate wiring layer, wherein the gate, source and drain electrodes and gate wiring layer have upper surface levels equal to or lower than that of the device isolation insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.