Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds
US7211509B1 · kind B1 · utility
50Cited by
3References
24Claims
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Key dates
| Filing date | Jun 14, 2004 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | Jun 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28556
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for depositing a ruthenium metal layer on a dielectric substrate are provided. The methods involve, for instance, exposing the dielectric substrate to an amine-containing compound, followed by exposing the substrate to a ruthenium precursor and an optional co-reactant such that the amine-containing compound facilitates the nucleation on the dielectric surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.