Heat-processing method for semiconductor process under a vacuum pressure
US7211514B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2004 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | Aug 25, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/46
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for subjecting target substrates to a heat process under a vacuum pressure includes a transfer step, heating-up and pressure-reducing step, and heat-processing step. The transfer step is arranged to transfer into a reaction chamber a holder that supports the substrates at intervals. The heating-up and pressure-reducing step following the transfer step is arranged to heat up the reaction chamber to a process temperature, and exhaust the reaction chamber to a process pressure. During the heating-up and pressure-reducing step, the reaction chamber is set at the process pressure after being set at the process temperature, to form a state where the reaction chamber has the process temperature under a pressure higher than the process pressure. The heat-processing step following the heating-up and pressure-reducing step is arranged to subject the substrates to the heat process at the process temperature and process pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.