Method of forming insulating layer in semiconductor device
US7211524B2 · kind B2 · utility
503Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2002 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | Dec 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of forming an insulating film in a semiconductor device. After a mixed gas of alkyl silane gas and N2O gas is supplied into the deposition equipment, a radio frequency power including a short pulse wave for causing incomplete reaction upon a gas phase reaction is applied to generate nano particle. The nano particle is then reacted to oxygen radical to form the insulating film including a plurality of nano voids. A low-dielectric insulating film that can be applied to the nano technology even in the existing LECVD equipment is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.