Semiconductor device having a particular electrode structure
US7211892B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2005 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | Jun 7, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/1476
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to inhibit the connection failure due to the degradation of the connection interface strength of the electrode pad and the warp thereof in the semiconductor device having an electrode pad, a metal layer formed on the electrode pad, and a metal bump formed on the metal layer, in the present invention, gold (Au) is contained in the metal layer, the metal bump is made of solder mainly made of Sn and designed to have an average height H of 100 μm or less per unit area in the electrode pad, and the concentration of Au of the metal layer dissolved in the solder is set to 1.3×10−3 (Vol %) or less. More preferably, the metal bump contains palladium (Pd), and the solder coating for forming the metal bump on the electrode pad is performed by using the dipping and the paste printing in combination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.