Semiconductor nonvolatile memory device
US7212444B2 · kind B2 · utility
5Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 26, 2005 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | Aug 20, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An operation scheme for operating stably a semiconductor nonvolatile memory device is provided.When hot-hole injection is conducted in the semiconductor nonvolatile memory device of a split gate structure, the hot-hole injection is verified using a crossing point that does not change with time. Thus, an erased state can be verified without being aware of any time-varying changes.Also, programming or programming/erasure is conducted by repeating pulse voltage or multi-step voltage application to a gate section multiple times.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.