Method of making semiconductor device using a novel interconnect cladding layer

US7214594B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Lawrence Wong · Fremont, US
• Jihperng Leu · Portland, US
• Grant Kloster · Lake Oswego, US
• Andrew Ott · Hillsboro, US
• Patrick Morrow · Portland, US

Key dates

• Filing date: Mar 26, 2002
• Grant date: May 8, 2007
• Expiry date: Mar 30, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method and apparatus are provided an interconnect cladding layer. In one embodiment, a first sacrificial layer is deposited over a substrate and patterned. In the vias created during the patterning operation, a conductive material is placed to create conductive interconnects. After planarizing the conductive material, the sacrificial layer is removed leaving the interconnect exposed. A cladding layer is then deposited over the conductive material.