Interlevel dielectric layer and metal layer sealing

US7214608B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Matthew S. Angyal · Stormville, US
• Peter Biolsi · New Windsor, US
• Lawrence A. Clevenger · Saratoga Springs, US
• Habib Hichri · Snyder, US
• Bernd Kastenmeier · Austin, US
• Michael Lane · Somers, US
• Jeffrey R. Marino · Fishkill, US
• Vincent J. McGahay · Poughkeepsie, US
• Theodorus E. Standaert · Clifton Park, US

Key dates

• Filing date: Jul 29, 2004
• Grant date: May 8, 2007
• Expiry date: Feb 8, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76844
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods for sealing an organic ILD layer and a metal layer after an etching step. The method includes etching through an ILD layer and leaving a remaining portion of an underlying metal layer cap, maintaining the device in an inert gas, and depositing at least a portion of a liner into the opening to seal the ILD layer and the metal layer. Subsequent processing may include formation of a via by etching through the portion of the liner and the remaining portion of the cap layer, and depositing a metal.