Technique for high efficiency metalorganic chemical vapor deposition
US7214618B2 · kind B2 · utility
1Cited by
30References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2004 |
| Grant date | May 8, 2007 |
| Priority date | — |
| Expiry date | Jan 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A technique for more efficiently forming conductive elements, such as conductive layers and electrodes, using chemical vapor deposition. A conductive precursor gas, such as a platinum precursor gas, having organic compounds to improve step coverage is introduced into a chemical vapor deposition chamber. A reactant is also introduced into the chamber that reacts with residue organic compounds on the conductive element so as to remove the organic compounds from the nucleating sites to thereby permit more efficient subsequent chemical vapor deposition of conductive elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.