Strain-silicon CMOS with dual-stressed film

US7214629B1 · kind B1 · utility

Assignee

• XILINX, INC. · US

Inventors

• Yuhao Luo · San Jose, US
• Deepak Nayak · Kanchinakote, IN

Key dates

• Filing date: Nov 16, 2004
• Grant date: May 8, 2007
• Expiry date: May 9, 2025

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/942

Abstract

A semiconductor device has an NMOS portion and a PMOS portion. A first stress layer overlies a first channel to provide a first stress type to the channel and a first modified stress layer is formed from a portion of the first stress layer overlying a second channel. A second stress layer providing a second stress type overlies the first modified stress layer and a second modified stress layer is formed from a portion of the second stress layer overlying the first stress layer.