Semiconductor memory component in cross-point architecture
US7215564B2 · kind B2 · utility
41Cited by
1References
18Claims
0Family size
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Key dates
| Filing date | Apr 27, 2005 |
| Grant date | May 8, 2007 |
| Priority date | — |
| Expiry date | Jul 12, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A programmable metallization memory cell with a storage region (3) formed from a chalcogenide glass and an electrode (4) which is preferably silver is located at the crossing point of a respective bit line (1) and a respective word line (2). There is a pn junction between the bit lines (1) and the chalcogenide glass.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.