Design method and system for optimum performance in integrated circuits that use power management
US7216310B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2004 |
| Grant date | May 8, 2007 |
| Priority date | — |
| Expiry date | Dec 29, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/327
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method (100) of designing a circuit. The method comprises specifying (105) a design parameter for memory transistors and logic transistors and selecting (110) a test retention-mode bias voltage for the memory transistors. The method further comprises determining (115) a first relationship of a retention-mode leakage current and the design parameter at the test retention-mode bias voltage and obtaining (120) a second relationship of an active-mode drive current and the design parameter. The first and second relationships are used (125) to assess whether there is a range of values of the design parameter where the retention-mode leakage current and the active-mode drive current are within a predefined circuit specification. The method also includes adjusting (130) the test retention-mode bias voltage and repeating the determining and the using if the retention-mode total leakage current or the active-mode drive current is outside of the predefined circuit specification.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.