Advanced process control of thermal oxidation processes, and systems for accomplishing same
US7217578B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2004 |
| Grant date | May 15, 2007 |
| Priority date | — |
| Expiry date | Apr 19, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is generally directed to various advanced process control methodologies for thermal oxidation processes, and various systems for accomplishing same. In one illustrative embodiment, the method comprises measuring an ambient pressure of an environment external to an oxidation chamber, determining a correction factor based upon at least the measured ambient pressure, determining at least one parameter of a thermal oxidation process to be performed in the oxidation chamber based upon the determined correction factor, and performing the thermal oxidation process comprised of the determined parameter on at least one substrate positioned in the oxidation chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.