Methods of forming reacted conductive gate electrodes
US7217603B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2005 |
| Grant date | May 15, 2007 |
| Priority date | — |
| Expiry date | Mar 7, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method for fabricating a semiconductor device involve a semiconductor layer that includes a first material and a second material. The first and second materials can be silicon and germanium. A contact of the device has a portion proximal to the semiconductor layer and a portion distal to the semiconductor layer. The distal portion includes the first material and the second material. A metal layer formed adjacent to the relaxed semiconductor layer and adjacent to the distal portion of the contact is simultaneously reacted with the relaxed semiconductor layer and with the distal portion of the contact to provide metallic contact material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.