Method of manufacturing a material compound wafer
US7217639B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 3, 2004 |
| Grant date | May 15, 2007 |
| Priority date | — |
| Expiry date | Jul 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for manufacturing a material compound wafer by forming a predetermined splitting area in a source substrate; attaching the source substrate to a handle substrate to form an assembly; heating the assembly for weakening the predetermined splitting area; and determining a degree of weakening of the predetermined splitting area which evidences the physical strength of the predetermined splitting area during or after heating to detect anomalies that may lead to damage of the source substrate, handle or assembly. The degree of weakening is advantageously determined in-situ and may be determined continuously or periodically during the heating. The invention further relates to an apparatus for thermal annealing device used in the manufacturing process of a material compound wafer. This apparatus generally includes a device for thermally annealing the assembly described above; and a device for determining the degree of weakening of the predetermined splitting area during or after thermal annealing to detect anomalies that may lead to damage of the source substrate, handle or assembly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.