Method of plasma etching high-K dielectric materials with high selectivity to underlying layers
US7217665B2 · kind B2 · utility
7Cited by
21References
31Claims
0Family size
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Key dates
| Filing date | Nov 20, 2002 |
| Grant date | May 15, 2007 |
| Priority date | — |
| Expiry date | Jan 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31122
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of plasma etching a layer of dielectric material having a dielectric constant that is greater than four (4). The method includes exposing the dielectric material layer to a plasma comprising a hydrocarbon gas and a halogen containing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.