Method of refreshing charge-trapping non-volatile memory using band-to-band tunneling hot hole (BTBTHH) injection
US7218554B2 · kind B2 · utility
3Cited by
6References
17Claims
0Family size
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Key dates
| Filing date | Jun 8, 2005 |
| Grant date | May 15, 2007 |
| Priority date | — |
| Expiry date | Jul 1, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0466
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of using a non-volatile memory that utilizes a charge-trapping layer for data storage is described. A refresh step is performed, after the non-volatile memory is subject to multiple write/erase cycles causing hard-to-erase electrons in the charge-trapping layer, to eliminate the hard-to-erase electrons. After the refresh step, the non-volatile memory is used again.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.