Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient
US7220313B2 · kind B2 · utility
10Cited by
8References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2003 |
| Grant date | May 22, 2007 |
| Priority date | — |
| Expiry date | Jun 13, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/906
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing silicon carbide crystal by providing an ambient atmosphere of hydrogen in the growth chamber. The hydrogen atoms, in effect, block, reduce, or otherwise hinder the incorporation of nitrogen atoms at the surface of the growing crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.