Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy

US7220658B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Benjamin A. Haskell · Lompoc, US
• Michael D. Craven · Goleta, US
• Paul T. Fini · Lompoc, US
• Steven P. DenBaars · Goleta, US
• James S. Speck · Fremont, US
• Shuji Nakamura · Goleta, US

Key dates

• Filing date: Jul 15, 2003
• Grant date: May 22, 2007
• Expiry date: Jul 15, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02639
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density.