Organometallic precursors for the chemical phase deposition of metal films in interconnect applications
US7220671B2 · kind B2 · utility
46Cited by
6References
17Claims
0Family size
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Key dates
| Filing date | Mar 31, 2005 |
| Grant date | May 22, 2007 |
| Priority date | — |
| Expiry date | Jul 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76858
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Chemical phase deposition processes utilizing organometallic precursors to form thin films are herein described. The organometallic precursors may include a single metal center or multiple metal centers. The chemical phase deposition may be chemical vapor deposition (CVD), atomic layer deposition (ALD), or hybrid CVD and ALD. The use of these chemical phase deposition processes with the organometallic precursors allows for the conformal deposition of films within openings having widths of less than 100 nm and more particularly less than 50 nm to form thin films such as barrier layers, seed layers, and adhesion layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.