Technique for evaluating a fabrication of a die and wafer
US7220990B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2004 |
| Grant date | May 22, 2007 |
| Priority date | — |
| Expiry date | Sep 21, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The fabrication of the wafer may be analyzed starting from when the wafer is in a partially fabricated state. The value of a specified performance parameter may be determined at a plurality of locations on an active area of a die of the wafer. The specified performance parameter is known to be indicative of a particular fabrication process in the fabrication. Evaluation information may then be obtained based on a variance of the value of the performance parameter at the plurality of locations. This may be done without affecting a usability of a chip that is created from the die. The evaluation information may be used to evaluate how one or more processes that include the particular fabrication process that was indicated by the performance parameter value was performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.