Method of inspecting a mask or reticle for detecting a defect, and mask or reticle inspection system
US7221788B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2003 |
| Grant date | May 22, 2007 |
| Priority date | — |
| Expiry date | Jul 21, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30148
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of inspecting a mask or reticle, the mask or reticle being provided with a pattern to be transferred onto a semiconductor wafer, the pattern having a defect, includes the step of creating a plurality of logical zones and uniquely associating each of said logical zones with a surface area of said pattern. Then, an inspection rule representing a characteristic sensitivity for detecting a defect is associated with each of said logical zones. An image of said pattern is then recorded and compared with a reference image of an ideal pattern for locating a defect within said pattern. One of said logical zones is then identified with said located defect and that inspection rule which is associated with said identified logical zone is retrieved from a memory. The inspection rule is then applied to a characteristic of said defect for determining, whether said defect is to be repaired. A signal can be issued in response to said determination.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.