Method of depositing an amorphous carbon layer
US7223526B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2004 |
| Grant date | May 29, 2007 |
| Priority date | — |
| Expiry date | Feb 10, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.