Process for fabricating a semiconductor device having an insulating layer formed over a semiconductor substrate
US7223677B2 · kind B2 · utility
1Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2004 |
| Grant date | May 29, 2007 |
| Priority date | — |
| Expiry date | Jan 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for manufacturing a semiconductor device comprising an insulating layer that includes a seed layer formed on a silicon substrate. The seed layer is formed by exposing a hydrogen-terminated surface of the silicon substrate in a substantially oxygen-free environment to a seed layer precursor comprising a methylated metal. Forming the insulating layer further includes depositing a dielectric material on the seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.