Wafer level bumping process
US7223683B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 28, 2004 |
| Grant date | May 29, 2007 |
| Priority date | — |
| Expiry date | Sep 15, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bumping process mainly comprises the following steps. Initially, a wafer having a plurality of bonding pads and a passivation layer with passivation openings exposing the bonding pads is provided. Next, a first dielectric layer with first openings and second openings is disposed on the wafer. The first openings and second openings expose the bonding pads and the portions of the passivation layer respectively. Afterwards, a patterned first electrically conductive layer is formed over the first dielectric layer and the bonding pads. Then a second dielectric layer is formed over the first dielectric layer and the patterned first electrically conductive layer and exposes the patterned first conductive layer through the second openings to form a plurality of bump pads wherein the bump pads are electrically connected to bonding pads. Next, a second electrically conductive layer is formed over the second dielectric layer and the bump pads. Then, a plurality of bumps are formed on the portions of the second electrically conductive layer covering the bump pads. Finally, the bumps are reflowed and the portions of the second electrically conductive layer covered by the reflowed bumps are re…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.