Dual-damascene metallization interconnection
US7224063B2 · kind B2 · utility
22Cited by
14References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2001 |
| Grant date | May 29, 2007 |
| Priority date | — |
| Expiry date | Jun 8, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure, comprising: a lower level wire having a side and a bottom, the lower level wire comprising: a lower core conductor and a lower conductive liner, the lower conductive liner on the side and the bottom of the lower level wire; an upper level wire having a side and a bottom, the upper level wire comprising an upper core conductor and an upper conductive liner, the upper conductive liner on the side and the bottom of the upper level wire; and the upper conductive liner in contact with the lower core conductor and also in contact with the lower conductive liner in a liner-to-liner contact region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.