Azimuthal scanning of a structure formed on a semiconductor wafer
US7224471B2 · kind B2 · utility
27Cited by
22References
23Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 28, 2003 |
| Grant date | May 29, 2007 |
| Priority date | — |
| Expiry date | Feb 4, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/956
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A structure formed on a semiconductor wafer is examined by directing an incident beam at the structure at an incidence angle and a azimuth angle. The incident beam is scanned over a range of azimuth angles to obtain an azimuthal scan. The cross polarization components of diffracted beams are measured during the azimuthal scan.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.