Method for fabricating a carrier substrate
US7226509B2 · kind B2 · utility
12Cited by
18References
28Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 18, 2003 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | Jul 20, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/915
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for fabricating a carrier substrate. The technique includes providing a crystalline or mono-crystalline base substrate, growing a stiffening layer on a front face of the base substrate at a thickness sufficient to form a carrier substrate for subsequent processing, and detaching the stiffening layer from the base substrate to obtain the carrier substrate and a remainder of the base substrate. The carrier substrate is suitable for use in growing high quality homo-epitaxial or hetero-epitaxial films thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.