Method of etching high aspect ratio features
US7226868B2 · kind B2 · utility
37Cited by
18References
43Claims
0Family size
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Key dates
| Filing date | Oct 31, 2002 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | Oct 31, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing system for and method of utilizing an improved etch chemistry for effectively etching high aspect ratio silicon features. The process chemistry employs precursor gases suitable for producing a fluorine/chlorine etch chemistry as well as precursor gases suitable for forming chemical bonds of sufficient strength to create stable feature side-walls. The improved process chemistries include SO2/SF4/SiCl4, SO2/SF4/Cl2, SO2/SiF4/SiCl4, SO2SIF4/Cl2, O2/F2/Cl2, N2 O/F2/Cl2, and NO2/F2/Cl2-based chemistries.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.