Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing
US7226869B2 · kind B2 · utility
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28References
38Claims
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Key dates
| Filing date | Oct 29, 2004 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | Feb 2, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods for forming a protective polymeric coating on a silicon or silicon-carbide electrode of a plasma processing chamber are provided. The polymeric coating provides protection to the underlying surface of the electrode with respect to exposure to constituents of plasma and gaseous reactants. The methods can be performed during a process of cleaning the chamber, or during a process for etching a semiconductor substrate in the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.