Robert C. Hefty
8Patents
2h-index
32Co-inventors
43Inventor score
Filing activity: Oct 29, 2004 → Oct 3, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9234775B2 | Methods for verifying gas flow rates from a gas supply system into a plasma processing chamber | Physics | 6 | Active |
| US8394722B2 | Bi-layer, tri-layer mask CD control | Electricity | 4 | Active |
| US7291286B2 | Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses | Electricity | 1 | Expired |
| US8236188B2 | Method for low-K dielectric etch with reduced damage | Electricity | 1 | Active |
| US8114780B2 | Method for dielectric material removal between conductive lines | Electricity | 0 | Active |
| US7226869B2 | Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing | Electricity | 0 | Expired |
| US7558641B2 | Recipe report card framework and methods thereof | Emerging Cross-Sectional Technologies | 0 | Active |
| US8906248B2 | Silicon on insulator etch | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.