Systems and methods for beam angle adjustment in ion implanters
US7227160B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2006 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | Sep 13, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24528
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture within an aperture assembly is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.