Silicon wafer and method for producing silicon single crystal
US7229495B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2003 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Mar 27, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/305
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for growing a silicon single crystal ingot by a Czochralski method, which is capable of providing silicon wafers having very uniform in-plane quality and which results in improvement of semiconductor device yield. A method is provided for producing a silicon single crystal ingot by a Czochralski method, wherein when convection distribution of a silicon melt is divided into a core cell and an outer cell, the silicon single crystal ingot is grown under the condition that the maximal horizontal direction width of the core cell is 30 to 60% of a surface radius of the silicon melt. In one embodiment the silicon single crystal ingot is grown under the condition that the maximal vertical direction depth of the core cell is equal to or more than 50% of the maximal depth of the silicon melt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.