Silicon epitaxial wafer and process for manufacturing the same
US7229501B2 · kind B2 · utility
1Cited by
3References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 17, 2003 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Aug 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a silicon epitaxial wafer having an excellent IG capability all over the radial direction thereof and a process for manufacturing the same. The present invention is directed to a silicon epitaxial wafer having an excellent gettering capability all over the radial direction thereof, wherein density of oxide precipitates detectable in the interior of a silicon single crystal substrate after epitaxial growth is 1×109/cm3 or higher at any position in the radial direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.