Method for manufacturing a semiconductor device using a sidewall spacer etchback
US7229869B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2005 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Jun 8, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
Abstract
The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit. The method for manufacturing the semiconductor device, among other steps, includes forming a gate structure (130) over a substrate (110), the gate structure (130) having L-shaped sidewall spacers (430) on opposing sidewalls thereof and placing source/drain implants (310 or 510) into the substrate (110) proximate the gate structure (130). The method for manufacturing the semiconductor device further includes removing at least a portion of a horizontal segment of the L-shaped sidewall spacers (430).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.