Capacitor with hafnium oxide and aluminum oxide alloyed dielectric layer and method for fabricating the same
US7229888B2 · kind B2 · utility
2Cited by
3References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2004 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Apr 7, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a capacitor having a hafnium oxide and aluminum oxide alloyed dielectric layer and a method for fabricating the same. The capacitor includes: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode formed on the dielectric layer, wherein a portion of the dielectric layer contacting one of the lower electrode and the upper electrode is formed by alloying hafnium oxide and aluminum oxide together.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.