Oxygen plasma treatment for enhanced HDP-CVD gapfill
US7229931B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2004 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Jun 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent gas is flowed into the substrate processing chamber. The fluent gas is introduced into the substrate processing chamber at a flow rate of at least 500 sccm. A plasma is formed having an ion density of at least 1011 ions/cm3 from the process gas to deposit a first portion of the silicon oxide film over the substrate and into the gap. Thereafter, the deposited first portion is exposed to an oxygen plasma having at least 1011 ions/cm3. Thereafter, a second portion of the silicon oxide film is deposited over the substrate and into the gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.